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The thermal conductivities of (100) γ-Ga2O3 films deposited on (100) MgAl2O4 substrates with various thicknesses were measured using frequency-domain thermoreflectance. The measured thermal conductivities of γ-Ga2O3 films are lower than the thermal conductivities of (2¯ 01) β-Ga2O3 films of comparable thickness, which suggests that γ-phase inclusions in the doped or alloyed β-phase may affect its thermal conductivity. The thermal conductivity of γ-Ga2O3 increases from 2.3−0.5+0.9 to 3.5±0.7 W/m K for films with thicknesses of 75–404 nm, which demonstrates a prominent size effect on thermal conductivity. The thermal conductivity of γ-Ga2O3 also shows a slight increase as temperature increases from 293 to 400 K. This increase in thermal conductivity occurs when defect and boundary scattering suppress signatures of temperature-dependent Umklapp scattering. γ-Ga2O3 has a cation-defective spinel structure with at least two gallium vacancies in every unit cell, which are the likely source of defect scattering. 

Phase transitions in metastable α-, κ(ε)-, and γ-Ga2O3 films to thermodynamically stable β-Ga2O3 during annealing in air, N2, and vacuum have been systematically investigated via in situ high-temperature x-ray diffraction (HT-XRD) and scanning electron microscopy (SEM). These respective polymorphs exhibited thermal stability to ∼471–525 °C, ∼773–825 °C, and ∼490–575 °C before transforming into β-Ga2O3, across all tested ambient conditions. Particular crystallographic orientation relationships were observed before and after the phase transitions, i.e., (0001) α-Ga2O3 → (2¯01) β-Ga2O3, (001) κ(ε)-Ga2O3 → (310) and (2¯01) β-Ga2O3, and (100) γ-Ga2O3 → (100) β-Ga2O3. The phase transition of α-Ga2O3 to β-Ga2O3 resulted in catastrophic damage to the film and upheaval of the surface. The respective primary and possibly secondary causes of this damage are the +8.6% volume expansion and the dual displacive and reconstructive transformations that occur during this transition. The κ(ε)- and γ-Ga2O3 films converted to β-Ga2O3 via singular reconstructive transformations with small changes in volume and unchanged surface microstructures. 

Abstract BaTiO₃heated in an excess of SrCl₂at 1150 °C converts to SrTiO₃through an ion exchange reaction. The SrTiO₃synthesized by ion exchange produces hydrogen from pH 7 water at a rate more than twice that of conventional SrTiO₃treated identically. The apparent quantum yield for hydrogen production in pure water of the ion exchanged SrTiO₃is 11.4% under 380 nm illumination. The catalyst resulting from ion‐exchange differs from conventional SrTiO₃by having ≈2% residual Ba, inhomogeneous Cl‐doping at a concentration less than 1%, Kirkendall voids in the centers of particles that result from the unequal rates of Sr and Ba diffusion together with the transport of Ti and O, and nanoscale regions near the surface that have lattice spacings consistent with the Sr‐excess phase Sr₂TiO₄. The increased photochemical efficiency of this nonequilibrium structure is most likely related to the Sr‐excess, which is known to compensate donor defects that can act as charge traps and recombination centers.